A Si-based quantum-dot light-emitting diode

A Si-based quantum-dot light-emitting diode
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DOI：
10.1063/1.1882757
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发表时间：
2005-03
期刊：
Applied Physics Letters
影响因子：
4
通讯作者：
M. Jo;K. Ishida;N. Yasuhara;Y. Sugawara;K. Kawamoto;S. Fukatsu
M. Jo;K. Ishida;N. Yasuhara;Y. Sugawara;K. Kawamoto;S. Fukatsu
中科院分区：
物理与天体物理2区
文献类型：
--
作者：
M. Jo;K. Ishida;N. Yasuhara;Y. Sugawara;K. Kawamoto;S. Fukatsu

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采用硅分子束外延技术制备了硅基发光二极管(LED)，其中应变GaSb量子点嵌入到硅中的有源区。在11K下，近能带发光的外量子效率为0.3%。标准灵敏度红外相机的直接成像也证明了硅基QD-LED的高亮度。描述了室温下工作的QD-LED的特性。
A Si-based light-emitting diode (LED) containing strained GaSb quantum dots (QDs) embedded in Si within the active region was fabricated by means of Si molecular-beam epitaxy. An external quantum efficiency of 0.3% was obtained for near bandedge luminescence at 11 K. The high luminosity of Si-based QD-LED was also evidenced by the fact that direct imaging on an infrared camera of standard sensitivity was successful. Characteristics of the QD-LED operating at room temperature are described.