Effect of an ITO current spreading layer on the performance of InGaN MQW solar cells
Effect of an ITO current spreading layer on the performance of InGaN MQW solar cells
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DOI：
10.1002/pssc.201510171
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发表时间：
2016-01
期刊：
影响因子：
--
通讯作者：
J. Bai;M. Athanasiou;Tao Wang
中科院分区：
文献类型：
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作者：
J. Bai;M. Athanasiou;Tao Wang
通过使用和不使用氧化铟锡 (ITO) 电流扩展层 (CSL) 的制造，研究了基于 InGaN 的太阳能电池。对于具有平坦顶面的器件，使用 ITO CSL 可以增强 1 个太阳空气质量 1.5 个全局光谱照明下的性能。相比之下，当应用表面纹理来显着提高光吸收时，不使用ITO CSL的器件的效率比使用ITO的器件更高。此外，还对相应表面的反射率和ITO CSL的透射率进行了测量。已经从表面反射、由于 ITO CSL 遮蔽导致的光损失以及与不存在 ITO CSL 相关的功率损失等方面讨论了 ITO CSL 的影响。 （© 2015 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
InGaN-based solar cells have been investigated through fabrication with and without using an indium-tin-oxide (ITO) current spreading layer (CSL). For the devices with a planar top surface, utilization of the ITO CSL leads to enhanced performance under 1 sun air-mass 1.5 global spectrum illumination. In contrast, when surface-texturing is applied to significantly improve the light absorption, the efficiency of the device without using the ITO CSL is higher compared to the one with the ITO. Furthermore, measurements on reflectance of the corresponding surfaces and transmission of the ITO CSL are carried out. The influence of the ITO CSL has been discussed in terms of surface reflection, the light loss due to the ITO CSL shading and the power loss associated with the absence of the ITO CSL. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)