Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays
Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays
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DOI：
10.3390/mi10080492
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发表时间：
2019-08-01
期刊：
影响因子：
3.4
通讯作者：
Hieu Pham Trung Nguyen
中科院分区：
文献类型：
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作者：
Ha Quoc Thang Bui;Velpula, Ravi Teja;Hieu Pham Trung Nguyen
我们已经展示了全彩色和白色的微型发光二极管（μ LED）使用InGaN/AlGaN核壳纳米线异质结构，生长在硅衬底上的分子束外延。通过控制器件有源区的铟组分，制备了波长可从蓝光到红光调谐的InGaN/AlGaN核壳纳米线μ LED阵列。此外，我们制造的无磷光体白色μ LED表现出强大的和高度稳定的白光发射，具有类似于94的高显色指数。μ LED为圆形，直径从30 μ m到100 μ m不等。这种高性能mu LED非常适合下一代高分辨率微型显示器应用。
We have demonstrated full-color and white-color micro light-emitting diodes (mu LEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire mu LED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color mu LEDs demonstrate strong and highly stable white-light emission with high color rendering index of similar to 94. The mu LEDs are in circular shapes with the diameter varying from 30 to 100 mu m. Such high-performance mu LEDs are perfectly suitable for the next generation of high-resolution micro-display applications.