Reduction of Fluctuation in Semiconductor Conductivity by One-by-One Ion Implantation of Dopant Atoms
Reduction of Fluctuation in Semiconductor Conductivity by One-by-One Ion Implantation of Dopant Atoms
复制标题
通过掺杂原子的逐一离子注入减少半导体电导率的波动
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
I. Ohdomari
中科院分区：
文献类型：
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作者：
T. Shinada;Atsuki Ishikawa;Chie Hinoshita;M. Koh;I. Ohdomari
采用单离子注入（SII）的方法，通过注入少量的掺杂原子，首次成功地降低了精细半导体区域内固有的电性能波动，使我们能够在精细半导体区域内逐一注入掺杂离子，直至达到所需的数量。用SII对半导体器件有源区对应的精细电阻器的电导进行了修整。首先测量了亚微米尺度硅电阻中每一个掺杂原子的电导增加为18 nS/原子。其次，采用传统的器件制造工艺制作了亚µm尺寸的极细测试电阻器，得到了测试器件内电导的统计分布；然后，将将电导值修剪到初始分布较高一侧的某一值所需的单个离子的数量注入每个测试电阻器。初始电导波动从63%降至13%。
The inherent fluctuation of electrical properties in a fine semiconductor region has been successfully reduced for the first time by implanting a small number of dopant atoms by means of single ion implantation (SII) which enables us to implant dopant ions one by one into a fine semiconductor region until the necessary number is reached. Trimming of the conductance of a fine resistor which corresponds to an active region in semiconductor devices has been tried by using the SII. Firstly the conductance increase per one dopant atom in a sub-µm scale Si resistor was measured to be 18 nS/atom. Secondly very fine test resistors with a size of sub-µm were made by conventional device fabrication technology and the statistical distribution of conductance in the test devices was obtained. Then the number of single ions necessary to trim the conductance value to a certain value in the higher side of the initial distribution was implanted to each test resistor. The initial conductance fluctuation of 63% has been reduced to only 13%.