Sol-gel derived bismuth titanate thin films with c-axis orientation
Sol-gel derived bismuth titanate thin films with c-axis orientation
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DOI：
10.1023/a:1008780701687
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发表时间：
2001-01-01
影响因子：
2.5
通讯作者：
Uhlmann, DR
中科院分区：
文献类型：
--
作者：
Dawley, JT;Radspinner, R;Uhlmann, DR
钛酸铋（Bi 4 Ti 3 O 12）是层状钙钛矿家族的一员，具有一系列独特的铁电性能，包括高反射极化、低矫顽场和高居里温度，使其成为数据存储应用的可能候选材料。在这项调查中，钛酸铋，或BiT，薄膜通过溶胶-凝胶法制备，以检查处理相发展和取向的影响。将溶液沉积到镀铂硅上，然后在100%O-2中在550 ℃至700 ℃的温度下热处理1小时。结果发现，c轴取向的BiT膜可以形成在温度低至550 degreesC通过使用氧化铋模板层，而没有氧化铋模板的膜具有在相同的温度范围内的随机取向。
Bismuth titanate (Bi4Ti3O12), a member of the layered perovskite family, has a unique set of ferroelectric properties, which include a high remanent polarization, low coercive field, and high Curie temperature, that make it a possible candidate for data storage applications. For this investigation, bismuth titanate, or BiT, films were fabricated via sol-gel method to examine the effect of processing on phase development and orientation. Solutions were deposited onto platinized silicon, and then heat treated for one hour at temperatures ranging from 550 degreesC to 700 degreesC in 100% O-2. It was found that c-axis orientated BiT films could be formed at temperatures as low as 550 degreesC by using bismuth oxide template layers, while films without bismuth oxide templating possessed a random orientation over the same temperature range.