Fractional quantization of ballistic conductance in one-dimensional hole systems
Fractional quantization of ballistic conductance in one-dimensional hole systems
复制标题
一维空穴系统中弹道电导的分数量化
DOI：
10.1103/physrevb.76.201302
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发表时间：
2007
影响因子：
3.7
通讯作者：
N. Bagraev
中科院分区：
文献类型：
--
作者：
M. Costa;I. Shelykh;N. Bagraev
我们分析了Si、Ge和GaAs体系中与轻、重空穴带相关的弹道电导的分数量化。结果表明，在连接两个准一维空穴引线的量子点接触区域，局域空穴态的形成极大地改变了电导模式。局域空穴和传播空穴之间的交换相互作用导致了不同于电子系统的弹道电导分数量化。附加平台处的电导值取决于轻空穴和重空穴带之间的偏移量\Delta和交换相互作用常数的符号。对于\Delta=0和铁磁交换相互作用，我们在7e^{2}/4h， 3e^{2}/h和15e^{2}/4h附近观察到额外的平台，而反铁磁相互作用平台在e^{2}/4h， e^{2}/h和9e^{2}/4h附近形成。对于较大的\Delta，单一平台形成于e^2/h。
We analyze the fractional quantization of the ballistic conductance associated with the light and heavy holes bands in Si, Ge and GaAs systems. It is shown that the formation of the localized hole state in the region of the quantum point contact connecting two quasi-1D hole leads modifies drastically the conductance pattern. Exchange interaction between localized and propagating holes results in the fractional quantization of the ballistic conductance different from those in electronic systems. The value of the conductance at the additional plateaux depends on the offset between the bands of the light and heavy holes, \Delta, and the sign of the exchange interaction constant. For \Delta=0 and ferromagnetic exchange interaction, we observe additional plateaux around the values 7e^{2}/4h, 3e^{2}/h and 15e^{2}/4h, while antiferromagnetic interaction plateaux are formed around e^{2}/4h, e^{2}/h and 9e^{2}/4h. For large \Delta, the single plateau is formed at e^2/h.