RDIS: A recursively defined invertible set scheme to tolerate multiple stuck-at faults in resistive memory
RDIS: A recursively defined invertible set scheme to tolerate multiple stuck-at faults in resistive memory
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DOI：
10.1109/dsn.2012.6263949
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发表时间：
2012-06
期刊：
影响因子：
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通讯作者：
R. Melhem;R. Maddah;Sangyeun Cho
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文献类型：
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作者：
R. Melhem;R. Maddah;Sangyeun Cho
由于具有高可扩展性和高密度的潜力，电阻式存储器被认为是一种有前途的技术，可以克服基于电荷的DRAM和闪存所面临的物理限制。然而，阻性存储器成功采用和商业化的主要负担是由工艺变化和有限的写入耐久性引起的低单元可靠性。通常，有缺陷和磨损的细胞会永久地停留在“0”或“1”。为了克服这一挑战，需要一种能够从许多硬故障中恢复的健壮的纠错方案。在本文中，我们提出并评估了一种新的RDIS方案，它可以有效地容忍内存卡滞故障。RDIS允许通过递归地确定并有效地跟踪卡在与写入值不同的位置的位的位置来正确检索数据，然后在读取时通过反转从这些位置读取的值来实现。RDIS的特点是故障概率非常低，随着故障数量的相对增加而缓慢增加。此外，RDIS比现有的最佳方案容忍更多的错误——在相同的开销水平下，平均可容忍高达95%的错误。
With their potential for high scalability and density, resistive memories are foreseen as a promising technology that overcomes the physical limitations confronted by charge-based DRAM and flash memory. Yet, a main burden towards the successful adoption and commercialization of resistive memories is their low cell reliability caused by process variation and limited write endurance. Typically, faulty and worn-out cells are permanently stuck at either `0' or `1'. To overcome the challenge, a robust error correction scheme that can recover from many hard faults is required. In this paper, we propose and evaluate RDIS, a novel scheme to efficiently tolerate memory stuck-at faults. RDIS allows for the correct retrieval of data by recursively determining and efficiently keeping track of the positions of the bits that are stuck at a value different from the ones that are written, and then, at read time, by inverting the values read from those positions. RDIS is characterized by a very low probability of failure that increases slowly with the relative increase in the number of faults. Moreover, RDIS tolerates many more faults than the best existing scheme-by up to 95% on average at the same overhead level.