COMPETITION BETWEEN PHOTOCORROSION AND PHOTO-OXIDATION OF REDOX SYSTEMS AT N-TYPE SEMICONDUCTOR ELECTRODES
COMPETITION BETWEEN PHOTOCORROSION AND PHOTO-OXIDATION OF REDOX SYSTEMS AT N-TYPE SEMICONDUCTOR ELECTRODES
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DOI：
10.1002/bbpc.19830870211
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发表时间：
1983-01-01
期刊：
影响因子：
--
通讯作者：
LUBKE, M
中科院分区：
文献类型：
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作者：
GERISCHER, H;LUBKE, M
在充满氧化还原电解液的封闭电解槽中，通过跟踪氧化还原电位的变化，研究了半导体MoSe_2、WSe_2及其与[Fe(CN)_6]_4-−-溶液接触时的光腐蚀。与积分光电流进行比较，给出了腐蚀的比例。结果表明，在恒定偏压和恒定[Fe(CN)6]4−浓度下，MoSe_2和WSe_2上的腐蚀程度与光照强度无关，但在间隙处腐蚀程度增大。它随[Fe(CN)6]4−浓度的增加而减小。推导了两个反应序列，定量地描述了光强和氧化还原物种浓度的影响。
Photocorrosion of the semiconductors MoSe2, WSe2and GaP in contact with [Fe(CN)6]4−‐solution has been investigated by following the change of the redox potential in a closed electrolysis cell filled with redox electrolyte. Comparison with the integrated photocurrent gives the fraction of corrosion. It was found that the fraction of corrosion at constant bias and constant [Fe(CN)6]4−concentration is independent on illumination intensity at MoSe2and WSe2, but increases at GaP. It decreases with increasing concentration of [Fe(CN)6]4−. Two reaction sequences are derived which describe the influence of the light intensity and of the concentration of the redox species quantitatively.