High dielectric constant Hf–Sn–Ti–O thin films
High dielectric constant Hf–Sn–Ti–O thin films
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高介电常数 Hf-Sn-Ti-O 薄膜
DOI：
10.1063/1.124887
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发表时间：
1999
影响因子：
4
通讯作者：
R. Fleming
中科院分区：
文献类型：
--
作者：
L. Schneemeyer;R. B. Dover;R. Fleming
采用成分扩散法对高介电常数Hf-Sn-Ti-O薄膜材料进行了表征。在250 °C下制备的组成为Hf0.2Sn0.05Ti0.75O2的薄膜具有优异的介电性能：根据工艺条件，获得40-70 nm厚的膜，介电常数为40-60，产生9-17 fF/μm2的比电容。 测得击穿场约为3-4 MV/cm，产生品质因数ee 0 Ebr = 19 μC/cm 2。 在1 MV/cm下测得的漏电流在10−7−10−6 A/cm 2范围内。
High dielectric constant Hf–Sn–Ti–O thin-film materials were identified using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2 prepared at 250 °C have excellent dielectric properties: 40–70-nm-thick films with a dielectric constant of 40–60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9–17 fF/μm2. Breakdown fields were measured to be about 3–4 MV/cm, yielding a figure of merit ee0Ebr∼19 μC/cm2. Leakage currents, measured at 1 MV/cm, were in the range 10−7−10−6 A/cm2.