High Perpendicular Exchange Bias with a Unique Temperature Dependence in Pt/Co/α-Cr2O3(0001) Thin Films

High Perpendicular Exchange Bias with a Unique Temperature Dependence in Pt/Co/α-Cr2O3(0001) Thin Films
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DOI:
10.1143/apex.3.113001
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发表时间:
2010-01-01
影响因子:
2.3
通讯作者:
Nakatani, Ryoichi
Nakatani, Ryoichi
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Shiratsuchi, Yu;Fujita, Toshiaki;Nakatani, Ryoichi

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采用反应直流磁控溅射方法制备了Pt/Co/α-Cr2O3(0001)薄膜,研究了其垂直交换偏置。在α-Cr2O_3(0001)层上,铂钴薄膜同时表现出垂直磁各向异性(PMA)和垂直交换偏置(PEB)。虽然在室温下没有观察到PEB,但它突然出现,并伴随着一种独特的温度依赖性。突然出现的PEB相当于约0.29erg/cm(2)的单向磁各向异性能J(K)。根据Meiklejohn和Bean的交换各向异性模型,讨论了JK突然出现的机制。(C)2010年日本应用物理学会
Perpendicular exchange bias was investigated using Pt/Co/alpha-Cr2O3(0001) thin films prepared by a reactive DC magnetron sputtering method. On the alpha-Cr2O3(0001) layer, the Pt/Co thin film simultaneously showed perpendicular magnetic anisotropy (PMA) and perpendicular exchange bias (PEB). Although PEB was not observed at room temperature, it suddenly appeared, accompanied by a unique temperature dependence. The suddenly appearing PEB was as large as a unidirectional magnetic anisotropy energy, J(K), of about 0.29 erg/cm(2). The mechanism of the sudden appearance of JK is discussed on the basis of Meiklejohn and Bean's exchange anisotropy model. (C) 2010 The Japan Society of Applied Physics