Relationship between residual carrier density and phase purity in InN grown by pressurized-reactor MOVPE
Relationship between residual carrier density and phase purity in InN grown by pressurized-reactor MOVPE
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加压反应堆MOVPE生长InN中残余载流子密度与相纯度的关系
DOI：
10.1002/pssc.201100404
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发表时间：
2012-03
期刊：
影响因子：
--
通讯作者：
Takashi Matsuoka
中科院分区：
文献类型：
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作者：
Yuantao Zhang;Takuya Iwabuchi;Ryuji Katayama;Takashi Matsuoka
本文研究了用加压反应器金属有机物气相外延法在α-Al_2 O_3衬底上生长的InN薄膜的残余载流子浓度与相纯度的关系。作为一种简单的、非破坏性的测量载波频率的方法，
We have studied the relationship between the residual carrier density and the phase purity of the InN films grown on α-Al2O3 substrate by pressurized-reactor metalorganic vapour phase epitaxy. As simple and non-destructive measurement methods of carrier d