In situ study on the electronic structure of graphene grown on 6H–SiC (0 0 0 1¯) with synchrotron radiation photoelectron spectroscopy
In situ study on the electronic structure of graphene grown on 6H–SiC (0 0 0 1¯) with synchrotron radiation photoelectron spectroscopy
复制标题
DOI：
10.1016/j.apsusc.2011.02.068
复制
发表时间：
2012
影响因子：
6.7
通讯作者：
C. Kang;Jun Tang;Limin Li;H. Pan;P. Xu;Shiqiang Wei;Xiufang Chen;Xiangang Xu
中科院分区：
文献类型：
--
作者：
C. Kang;Jun Tang;Limin Li;H. Pan;P. Xu;Shiqiang Wei;Xiufang Chen;Xiangang Xu
利用低能电子衍射 (LEED) 和同步辐射光电子能谱 (SRPES) 研究了超高真空 (UHV) 中 6H-SiC (0001´) 热分解产生的石墨烯的合成过程和详细电子结构。 LEED结果表明，随着退火温度的升高，6H-SiC（0001´）出现了不同的重构，最终产生了各向异性石墨烯层。 C 1s 核心能级的结果表明，归属于石墨烯的组分出现，石墨烯与基底之间的界面相互作用较弱。 Si簇的存在被Si 2p核心水平所证实，并且也许这些簇导致了粗糙的外延石墨烯表面。价带光谱结果表明，在高退火温度下，生长的石墨烯层中同时存在σ键和π键。
Low energy electron diffraction (LEED) and synchrotron radiation photoelectron spectroscopy (SRPES) were used to study the synthesis process and detailed electronic structures of graphene produced by thermal decomposition of 6H–SiC (0001¯) in ultrahigh vacuum (UHV). The LEED results showed that as annealing temperature increased, different reconstructions of 6H–SiC (0001¯) appeared and the anisotropic graphene layers were produced finally. The results of C 1s core levels indicated that the component, which was assigned to graphene emerged and the interface interaction between graphene and the substrate was weak. The existence of Si clusters was confirmed by Si 2p core levels and perhaps these clusters led to rough epitaxial graphene surface. The results of valence band spectra showed that at high annealing temperature both of σ and π bonds existed in the grown graphene layers.