Ultra-fast switching of infrared radiation by laser-produced carriers in semiconductors
Ultra-fast switching of infrared radiation by laser-produced carriers in semiconductors
复制标题
半导体中激光产生的载流子超快切换红外辐射
DOI：
10.1139/p79-176
复制
发表时间：
1979
影响因子：
1.2
通讯作者：
P. Corkum
中科院分区：
文献类型：
--
作者：
A. Alcock;P. Corkum
综述了半导体中激光产生的自由载流子作为控制红外辐射的手段的应用。讨论了反射开关和透射光开关的原理和基本实验。半导体开关的应用包括选择高功率10 μm脉冲，选通皮秒红外脉冲，以及产生同步的可见光和红外脉冲。
The use of laser-produced free carriers in a semiconductor as a means of controlling infrared radiation is reviewed. The theory and basic experiments of reflection and transmission switching are discussed. Applications of semiconductor switching include the selection of high power 10 μm pulses, the gating of picosecond infrared pulses, and the generation of synchronized visible and infrared pulses.