Preparation and optical properties of higher manganese silicide, (Mn,Fe)Siγ, thin films
Preparation and optical properties of higher manganese silicide, (Mn,Fe)Siγ, thin films
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高硅化锰(Mn,Fe)Siγ薄膜的制备及光学性能
DOI：
10.1016/j.apsusc.2018.07.141
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发表时间：
2018
影响因子：
6.7
通讯作者：
and Y. Miyazaki
中科院分区：
文献类型：
--
作者：
K. Hayashi;K. Ishii;C. Kawasaki;R. Honda;and Y. Miyazaki
本文研究了高硅化锰（HMS）系MnSiγ和（Mn，Fe）Siγ薄膜的光学性质。采用HMS的Mn 11 Si 19和（Mn 31/44 Fe 13/44）11 Si 19晶体结构模型，计算了MnSiγ和Mn 0. 7 Fe 0. 3Si γ的能带结构和导电类型。采用脉冲激光沉积法在R-蓝宝石衬底上生长了p型和n型α轴取向MnSiγ和Mn0.7Fe0.3Siγ薄膜。测得的MnSiγ薄膜的直接带隙为0.81（1）eV，Mn 0.7Fe 0.3Si γ薄膜的直接带隙为0.83（2）eV。这些结果表明了（Mn，Fe）Siγ基近红外吸收太阳能电池的潜力。
In this article, the optical properties of thin films of higher manganese silicide (HMS) systems, MnSiγand (Mn,Fe)Siγ, were investigated. Band structure calculations were performed using the Mn11Si19and (Mn31/44Fe13/44)11Si19crystal structure models of HMS to predict the conduction types and band gaps of MnSiγand Mn0.7Fe0.3Siγ, respectively. Using a pulsed laser deposition method, p-type MnSiγand n-type Mn0.7Fe0.3Siγthin films witha-axis orientation were grown on R-sapphire substrates. The measured direct band gaps were 0.81(1) eV for the MnSiγthin film and 0.83(2) eV for the Mn0.7Fe0.3Siγthin film. These results demonstrate the potential of (Mn,Fe)Siγ-based near-infrared absorption solar cells.