Properties of dielectric dead layers for SrTiO3 thin films on Pt electrodes

Properties of dielectric dead layers for SrTiO3 thin films on Pt electrodes
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Pt 电极上 SrTiO3 薄膜介电死层的特性

DOI:
10.1063/1.2433745
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发表时间:
2007
影响因子:
3.2
通讯作者:
S. Stemmer
S. Stemmer
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
N. H. Finstrom;J. Cagnon;S. Stemmer

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采用介电测量的方法研究了具有不同织构的钛酸锶薄膜和铂电极的平行板电容器中介质死层的特性。介电常数的表观厚度依赖于低介电常数的无源(死区)层,它位于与SrTiO_3薄膜串联的界面处。界面电容密度随薄膜微结构的变化而变化,与温度的关系不大。对介质死层厚度和介电常数的估计受到薄膜表面粗糙度(∼5 nm)的限制。对文献中提出的介质死层的可能来源进行了讨论。用介电测量作为温度的函数来表征具有不同织构的SrTiO_3薄膜和铂电极的平行板电容器中介质死层的性质。介电常数的表观厚度依赖于低介电常数的无源(死区)层,它位于与SrTiO_3薄膜串联的界面处。界面电容密度随薄膜微结构的变化而变化,与温度的关系不大。对介质死层厚度和介电常数的估计受到薄膜表面粗糙度(∼5 nm)的限制。对文献中提出的介质死层的可能来源的后果进行了讨论。
Dielectric measurements as a function of temperature were used to characterize the properties of the dielectric dead layers in parallel-plate capacitors with differently textured SrTiO3 thin films and Pt electrodes. The apparent thickness dependence of the permittivity was described with low-permittivity passive (dead) layers at the interfaces connected in series with the bulk of the SrTiO3 film. Interfacial capacitance densities changed with the film microstructure and were weakly temperature dependent. Estimates of the dielectric dead layer thickness and permittivity were limited by the film surface roughness (∼5nm). The consequences for the possible origins of dielectric dead layers that have been proposed in the literature are discussed.Dielectric measurements as a function of temperature were used to characterize the properties of the dielectric dead layers in parallel-plate capacitors with differently textured SrTiO3 thin films and Pt electrodes. The apparent thickness dependence of the permittivity was described with low-permittivity passive (dead) layers at the interfaces connected in series with the bulk of the SrTiO3 film. Interfacial capacitance densities changed with the film microstructure and were weakly temperature dependent. Estimates of the dielectric dead layer thickness and permittivity were limited by the film surface roughness (∼5nm). The consequences for the possible origins of dielectric dead layers that have been proposed in the literature are discussed.
T.Miwa 等人:“参数特殊值的重合根轨迹和杰克和麦克唐纳多项式”预印本。
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