Effect of AlGaN Si-Doped Barrier Layer on Optical Properties of Ultraviolet Light-Emitting Diodes
Effect of AlGaN Si-Doped Barrier Layer on Optical Properties of Ultraviolet Light-Emitting Diodes
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DOI：
10.7567/jjap.52.01ag04
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发表时间：
2013
影响因子：
1.5
通讯作者：
Yu-Hsuan Lu;Yi-Keng Fu;Shyh-Jer Huang;Y. Su;R. Xuan;M. Pilkuhn
中科院分区：
文献类型：
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作者：
Yu-Hsuan Lu;Yi-Keng Fu;Shyh-Jer Huang;Y. Su;R. Xuan;M. Pilkuhn
采用金属有机化学气相沉积法生长了具有不同Si掺杂浓度的AlGaN势垒的InGaN/AlGaN紫外发光二极管（UV LED）。通过对AlGaN势垒层进行Si掺杂，显著提高了紫外发光二极管的光输出功率。通过模拟模型对这种改进进行了详细的分析，结果表明，AlGaN势垒中Si掺杂浓度的增加有利于提高电子注入效率，同时也有利于提高辐射复合分布。
InGaN/AlGaN ultraviolet light-emitting diodes (UV LEDs) with AlGaN barriers having various Si doping concentrations are grown by metal–organic chemical vapor deposition. The light output power of UV LEDs was obviously improved as a result of Si doping of the AlGaN barriers. Detail analysis of this improvement by simulation modeling showed that the increase in Si doping concentration in AlGaN barrier is beneficial for increasing electron injection efficiency and simultaneously the radiative recombination distribution.