One-step growth of ca. 2-15 nm polymer thin films on hydrogen-terminated silicon
One-step growth of ca. 2-15 nm polymer thin films on hydrogen-terminated silicon
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DOI：
10.1002/marc.200700752
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发表时间：
2008-04-18
影响因子：
4.6
通讯作者：
Linford, Matthew R.
中科院分区：
文献类型：
--
作者：
Blake, Robert B.;Pei, Lei;Linford, Matthew R.
在这里，我们显示氢封端的硅（Si-H）作为一个一步的过程中直接聚合物的生长。将Si-H浸入引发剂、单体和交联剂的加热溶液中。所得的聚合物膜为2-15 nm厚，厚度可以通过改变反应条件来调节，并且聚合物膜是坚固的。在没有交联剂的聚合物生长中获得更薄的膜。由引发剂产生的自由基和生长的聚合物链可以从Si-H中拔出H原子以形成反应性悬挂键。这些又似乎与单体和交联剂反应。通过一个双键连接的交联剂可以接枝到在溶液中生长的聚合物链中。表面反应性是由光学椭圆偏振，X射线光电子能谱，原子力显微镜，和润湿证明。
Here we show direct polymer growth on hydrogen-terminated silicon (Si-H) as a one-step process. Si-H is immersed in a heated solution of an initiator, a monomer, and a crosslinker. The resulting polymer films are 2-15 nm thick, the thickness can be tuned by varying reaction conditions, and the polymer films are robust. Thinner films are obtained in polymer growth without crosslinker. Radicals produced by the initiator and in growing polymer chains may pluck H atoms from Si-H to make reactive dangling bonds. These in turn appear to react with monomers and crosslinkers. Crosslinkers tethered through one double bond may be grafted into polymer chains growing in solution. Surface reactivity is demonstrated by optical ellipsometry, X-ray photoelectron spectroscopy, atomic force microscopy, and wetting.