Spin Orientation of Electrons Associated with the Interband Absorption of Light in Semiconductors
Spin Orientation of Electrons Associated with the Interband Absorption of Light in Semiconductors
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发表时间：
1971
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影响因子：
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通讯作者：
M. Dyakonov;V. I. Perel’
中科院分区：
文献类型：
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作者：
M. Dyakonov;V. I. Perel’
从理论上研究了圆偏振光激发进入导带的电子的取向度与光的频率的关系。结果表明，这种依赖关系在与分裂价子带的存在有关的吸收阈值处有一个急剧弯曲。考虑了无反转中心晶体中电子的自旋弛豫，这是由于导带的自旋分裂引起的。在快速自旋弛豫的情况下，电子的稳态取向甚至在达到与分裂的子带相连的吸收阈值之前就可能消失，在达到阈值后，自旋取向必然会再次出现，但它的符号与阈值之前的符号相反。考虑了定向电子与空穴复合时产生的辐射极化。
The dependence of the degree of orientation of the electrons, which are excited into the conduction band by circularly polarized light, on the frequency of the light is investigated theoretically. It is shown that this dependence has a sharp bend at the absorption threshold connected with the presence of the split-off valence sub-band. The spin relaxation of the electrons in crystals without an inversion center, caused by the spin splitting of the conduction band, is considered. In the case of rapid spin relaxation, the steady-state orientation of the electrons may vanish even before the absorption threshold connected with the split-off sub-band is reached, In this connection, after the threshold is reached the spin orientation must appear again, but its sign is opposite to the sign it had before threshold. The polarization of the radiation which arises upon recombination of the oriented electrons with holes is considered.