Mid-infrared Ge-on-Si electro-absorption modulator

Mid-infrared Ge-on-Si electro-absorption modulator
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DOI:
10.1109/group4.2017.8082169
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发表时间:
2017-08
期刊:
2017 IEEE 14th International Conference on Group IV Photonics (GFP)
影响因子:
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通讯作者:
Tiantian Li;M. Nedeljkovic;N. Hattasan;A. Khokhar;S. Reynolds;S. Stankovic;M. Banakar;W. Cao;Z. Qu;C. Littlejohns;J. S. Penadés;K. Grabska;L. Mastronardi;D. Thomson;F. Gardes;G. Reed;Hequan Wu;Zhiping Zhou;G. Mashanovich
Tiantian Li;M. Nedeljkovic;N. Hattasan;A. Khokhar;S. Reynolds;S. Stankovic;M. Banakar;W. Cao;Z. Qu;C. Littlejohns;J. S. Penadés;K. Grabska;L. Mastronardi;D. Thomson;F. Gardes;G. Reed;Hequan Wu;Zhiping Zhou;G. Mashanovich
中科院分区:
其他
文献类型:
--
作者:
Tiantian Li;M. Nedeljkovic;N. Hattasan;A. Khokhar;S. Reynolds;S. Stankovic;M. Banakar;W. Cao;Z. Qu;C. Littlejohns;J. S. Penadés;K. Grabska;L. Mastronardi;D. Thomson;F. Gardes;G. Reed;Hequan Wu;Zhiping Zhou;G. Mashanovich

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我们首次在硅基锗材料平台上,利用自由载流子注入直波导的方法,研制出了波长为3.8 μm的波导电吸收调制器。制作的1mm长的器件在7V下具有> 35dB的调制深度。
We present the first waveguide electro-absorption modulator in germanium-on-silicon material platform at 3.8 μm wavelength, based on free-carrier injection into a straight waveguide. The fabricated 1 mm long device has modulation depth of >35 dB at 7 V.