Mid-infrared Ge-on-Si electro-absorption modulator
Mid-infrared Ge-on-Si electro-absorption modulator
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DOI:
10.1109/group4.2017.8082169
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发表时间:
2017-08
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通讯作者:
Tiantian Li;M. Nedeljkovic;N. Hattasan;A. Khokhar;S. Reynolds;S. Stankovic;M. Banakar;W. Cao;Z. Qu;C. Littlejohns;J. S. Penadés;K. Grabska;L. Mastronardi;D. Thomson;F. Gardes;G. Reed;Hequan Wu;Zhiping Zhou;G. Mashanovich
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作者:
Tiantian Li;M. Nedeljkovic;N. Hattasan;A. Khokhar;S. Reynolds;S. Stankovic;M. Banakar;W. Cao;Z. Qu;C. Littlejohns;J. S. Penadés;K. Grabska;L. Mastronardi;D. Thomson;F. Gardes;G. Reed;Hequan Wu;Zhiping Zhou;G. Mashanovich
We present the first waveguide electro-absorption modulator in germanium-on-silicon material platform at 3.8 μm wavelength, based on free-carrier injection into a straight waveguide. The fabricated 1 mm long device has modulation depth of >35 dB at 7 V.