Self-consistent electrothermal Monte Carlo simulation of single InAs nanowire channel metal-insulator field-effect transistors
Self-consistent electrothermal Monte Carlo simulation of single InAs nanowire channel metal-insulator field-effect transistors
复制标题
单 InAs 纳米线通道金属绝缘体场效应晶体管的自洽电热蒙特卡罗模拟
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
F. Dessenne
中科院分区：
文献类型：
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作者：
T. Sadi;J. Thobel;F. Dessenne
采用基于有限元网格划分的三维蒙特卡罗模拟方法，研究了具有单InAs纳米线沟道的金属-绝缘体场效应晶体管的电子输运和自热效应.该模型，耦合系综蒙特卡罗模拟与热扩散方程的解决方案，仔细校准这些设备上的实验工作的数据。本文包括器件的基本输出特性以及微观特性的输运，包括电流-电压曲线，发热和温度分布，和电子速度分布的分析。尽管低功耗，结果预测显着的峰值温度，由于高功率密度水平和不良的热管理，在这些结构。器件自热的程度被证明是强烈依赖于两个设备的偏置配置以及几何形状。
Electron transport and self-heating effects are investigated in metal-insulator field-effect transistors with a single InAs nanowire channel, using a three-dimensional electrothermal Monte Carlo simulator based on finite-element meshing. The model, coupling an ensemble Monte Carlo simulation with the solution of the heat diffusion equation, is carefully calibrated with data from experimental work on these devices. This paper includes an electrothermal analysis of the device basic output characteristics as well the microscopic properties of transport, including current-voltage curves, heat generation and temperature distributions, and electron velocity profiles. Despite the low power dissipation, results predict significant peak temperatures, due to the high power density levels and the poor thermal management in these structures. The extent of device self-heating is shown to be strongly dependent on both device biasing configuration as well as geometry.