Nickel: A very fast diffuser in silicon
Nickel: A very fast diffuser in silicon
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DOI：
10.1063/1.4807799
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发表时间：
2013-05-28
影响因子：
3.2
通讯作者：
Buonassisi, T.
中科院分区：
文献类型：
--
作者：
Lindroos, J.;Fenning, D. P.;Buonassisi, T.
镍越来越多地用于IC和光伏器件制造，但它有可能在硅中产生高度复合活性的沉淀物。近三十年来，公认的镍在硅中的扩散率一直是D-Ni（T）= 2.3 × 10（-3）exp（-0.47 eV/k（B）T）cm（2）/s，考虑到工业应用中镍快速扩散的报道，这是一个令人惊讶的低值。本文采用现代实验方法测量了高扩散系数D-Ni（T）=（1.6960 +/- 74）× 10（-4）exp（-0.15 +/- 0.04 eV/k（B）T）cm（2）/s。测得的活化能是接近的第一性原理理论使用轻推弹性带方法预测。我们测得的镍的扩散率高于先前公布的值在温度低于1150摄氏度，和数量级更高时，外推到室温。(C)2013 AIP Publishing LLC.
Nickel is increasingly used in both IC and photovoltaic device fabrication, yet it has the potential to create highly recombination-active precipitates in silicon. For nearly three decades, the accepted nickel diffusivity in silicon has been D-Ni(T) = 2.3 x 10(-3) exp(-0.47 eV/k(B)T) cm(2)/s, a surprisingly low value given reports of rapid nickel diffusion in industrial applications. In this paper, we employ modern experimental methods to measure the higher nickel diffusivity D-Ni(T) = (1.6960 +/- 74) x 10(-4) exp (-0.15 +/- 0.04 eV/k(B)T) cm(2)/s. The measured activation energy is close to that predicted by first-principles theory using the nudged-elastic-band method. Our measured diffusivity of nickel is higher than previously published values at temperatures below 1150 degrees C, and orders of magnitude higher when extrapolated to room temperature. (C) 2013 AIP Publishing LLC.