Morphologies and optical properties of black silicon by room temperature reactive ion etching
Morphologies and optical properties of black silicon by room temperature reactive ion etching
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DOI：
10.1016/j.materresbull.2020.110973
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发表时间：
2020-11-01
影响因子：
5.4
通讯作者：
Escoubas, Ludovic
中科院分区：
文献类型：
--
作者：
Atteia, Francois;Le Rouzo, Judikael;Escoubas, Ludovic
介绍了室温反应离子刻蚀法（RT-RIE）制备黑硅纳米结构。讨论了等离子体工艺参数对硅蚀刻的影响及其对构成BS的纳米结构形状的影响。此外，我们通过实验和有限差分时域（FDTD）方法建模研究了如何利用基于BS形态精细控制的光捕获效应来增加可见光和近红外区域的吸光度。吸光度高于99%，具有很强的角度接受度。本文提出了一种室温法制备高纵横比、高吸光度BS的优化工艺。
Black Silicon (BS) nanostructures fabricated by Reactive Ion Etching at Room Temperature (RT-RIE) are presented. We discuss the influence of the plasma process parameters on the silicon etching and their influence on the shape of the nanostructures constituting the BS. Furthermore, we study - both experimentally and using modeling by finite difference time domain (FDTD) method - how to increase absorptance in the visible and NIR regions using light trapping effect based on a fine control of the BS morphology. Absorptance higher than 99 % is reached with a strong angular acceptance. This paper proposes an optimized process to fabricate high aspect ratio and high absorptance BS using a room temperature process.