The effect of tuning the microstructure of TIPS-tetraazapentacene on the performance of solution processed thin film transistors
The effect of tuning the microstructure of TIPS-tetraazapentacene on the performance of solution processed thin film transistors
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DOI：
10.1039/c5tc03326h
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发表时间：
2016-01-01
影响因子：
6.4
通讯作者：
Bunz, Uwe H. F.
中科院分区：
文献类型：
--
作者：
Paulus, Fabian;Engelhart, Jens U.;Bunz, Uwe H. F.
本文报道了对称的6,13-二（三异丙基乙基）四氮杂二烯（TIPS-TAP）作为电子传输材料在有机场效应晶体管中的应用。我们研究了旋转镀膜和区域铸造技术沉积的TIPS-TAP薄膜的光学、电子、结构和形态特性。根据溶液处理条件和程序的不同，我们发现TIPS-TAP的微观结构多种多样，从高度多晶到排列良好的晶体膜。采用两种不同的结构制备场效应晶体管，评价了TIPS-TAP在这种薄膜中的电荷输运特性，偏应力实验表明TIPS-TAP具有良好的电稳定性。在区铸晶体管中，被提取的电子迁移率根据活性层的形貌变化了几个数量级，对于单轴排列的晶体，最大可达0.42 cm(2) V-1 s（-1）。
We report a comprehensive study of the symmetrical 6,13-bis(triisopropylsilylethynyl)tetraazapentacene (TIPS-TAP) used as an electron transporting material in organic field-effect transistors. We study the optical, electronic, structural and morphological properties of thin films of TIPS-TAP as deposited by spin-coating and zone-casting techniques. Depending on the solution processing conditions and procedures we find a variety of microstructures for TIPS-TAP ranging from highly polycrystalline to well-aligned crystalline films. Field-effect transistors are fabricated in two different architectures to evaluate the charge transport properties of TIPS-TAP in such films, and bias-stress experiments reveal a good electric stability of TIPS-TAP. The extracted electron mobilities vary over several orders of magnitude depending on the resulting morphology of the active layer reaching a maximum of 0.42 cm(2) V-1 s(-1) for uniaxial aligned crystallites in zone-cast transistors.