Highly textured ZnO thin films doped with indium prepared by the pyrosol method
Highly textured ZnO thin films doped with indium prepared by the pyrosol method
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DOI：
10.1016/0927-0248(95)00159-x
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发表时间：
1996-08
影响因子：
6.9
通讯作者：
C. Lee;K. Lim;Jinsoo Song
中科院分区：
文献类型：
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作者：
C. Lee;K. Lim;Jinsoo Song
采用热溶胶喷雾法在加热的 Corning 7059 玻璃上制备了铟掺杂 ZnO 薄膜。研究发现，铟掺杂对于高衬底温度下的晶粒生长具有重要作用。铟还被用作 N 型掺杂剂来改善电性能，我们获得了电阻率为 3.0 × 10−3Ω cm 的高导电性 ZnO:In 薄膜。在 425°C 至 475°C 的基板温度下，沉积的 ZnO:In 薄膜具有清晰的六角形微晶，因此，具有高度纹理化的表面，显示出由于微晶而产生的光学雾度现象。通过将基板温度从375°C改变到475°C，ZnO:In薄膜的雾度比在550 nm波长下可以控制在10%到50%之间。
Indium doped ZnO thin films have been prepared on heated Corning 7059 glass by the pyrosol spray method. It was found that indium doping has an important role in grain growth at high substrate temperature. Indium also was used to improve the electrical properties, acting as an N type dopant, and we obtained highly conductive ZnO:In thin films with a resistivity of 3.0 × 10−3Ω cm. At substrate temperatures from 425°C to 475°C, the deposited ZnO:In thin films have clear hexagonal crystallites and, therefore, a highly textured surface showing optical haze phenomena due to the crystallites. The haze ratio of ZnO:ln thin films can be controlled from 10% to 50% at the wavelength of 550 nm by varying the substrate temperature from 375°C to 475°C.