nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs
nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs
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DOI：
10.1109/ted.2003.816524
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发表时间：
2003-09-01
影响因子：
3.1
通讯作者：
Lundstrom, MS
中科院分区：
文献类型：
--
作者：
Ren, ZB;Venugopal, R;Lundstrom, MS
描述了一种对双栅金属氧化物半导体场效应晶体管 (MOSFET) 中的量子输运进行数值模拟的程序。该程序使用格林函数方法和基于所谓的 Buttiker 探针思想的简单散射处理。双栅极器件几何形状允许采用有效的模式空间方法，从而显着降低计算负担并允许用作设计工具。为了进行比较，还实现了玻尔兹曼输运方程的弹道解和漂移扩散方法。该程序描述了使用 nanoMOS 进行 10 nm 双倍的一些示例。提出了栅极 MOSFET。
A program to numerically simulate quantum transport in double gate metal oxide semiconductor field effect transistors (MOSFETs) is described. The program uses a Green's-function approach and a simple treatment of scattering based on the idea of so-called Buttiker probes. The double gate device geometry permits an efficient mode space approach that dramatically lowers the computational burden and permits use as a design tool. Also implemented for comparison are a ballistic solution of the Boltzmann transport equation and the drift-diffusion approaches. The program is described and some examples of the use of nanoMOS for 10 nm double. gate MOSFETs are presented.