Ultra-Thin Silicon Wafers Fabrication and Inverted Pyramid Texturing Based on Cu-Catalyzed Chemical Etching
Ultra-Thin Silicon Wafers Fabrication and Inverted Pyramid Texturing Based on Cu-Catalyzed Chemical Etching
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基于铜催化化学刻蚀的超薄硅片制造和倒金字塔制绒
DOI：
10.1007/s12633-020-00429-x
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发表时间：
2020-03-10
期刊：
影响因子：
3.4
通讯作者：
Chen, Ran
中科院分区：
文献类型：
--
作者：
Omer, Altyeb Ali Abaker;He, Zudong;Chen, Ran
超薄硅太阳能器件是一个潜在的发展方向，以减少材料的使用，从而降低成本。采用一步铜催化化学腐蚀法（CCCE）完成了超薄硅片和倒金字塔结构的制绒。本文系统地研究了H2 O2浓度、Cu（NO3）2浓度、反应温度、刻蚀时间等因素对表面形貌、晶片厚度和光陷的影响。结果表明，Cu粒子的引入能显著加速硅片的溶解，其减薄速率为18 μm/min，比常规KOH减薄系统快40倍以上。在300~1000 nm光谱范围内，覆盖倒金字塔结构的薄硅片具有~0.5%的超低反射率。最后讨论了腐蚀和倒金字塔结构的形成机理。目前的工作为薄硅制造开发了一种新的方法。这可以通过调整蚀刻参数来精确管理，从而解锁微电子和太阳能电池市场的潜在应用。
The ultra-thin silicon solar devices perform a potential development direction to decrease material usage and thus lowering the expense. The ultra-thin silicon wafer and inverted pyramid structure texturing were completed by one-step Cu-catalyzed chemical etching (CCCE). In this paper, the influence of H2O2concentration, Cu (NO3)2concentration, reaction temperature, and etching time on surface geometry, wafer thickness and light trapping were systematically investigated. The conclusion shows that introduce Cu-particles can significantly accelerate the dissolution of the silicon wafer, the thinning rate of 18 μm/min is more 40-times faster than that of conventional KOH thinning system. Inverted pyramid structure covered thin silicon wafer has ultra-low reflectivity of ~0.5% in the spectrum range of 300~1000 nm. The etching and inverted pyramid structure formation mechanism has finally discussed. The current work develops a new approach for thin silicon manufacturing. Which can be precisely managed by adjusting etching parameters that unlock potential applications in the microelectronics and solar cell market.