The Bi-mode Insulated Gate Transistor (BIGT) a potential technology for higher power applications
The Bi-mode Insulated Gate Transistor (BIGT) a potential technology for higher power applications
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DOI：
10.1109/ispsd.2009.5158057
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发表时间：
2009-06
期刊：
影响因子：
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通讯作者：
Munaf T. A. Rahimo;A. Kopta;U. Schlapbach;J. Vobecký;R. Schnell;S. Klaka
中科院分区：
文献类型：
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作者：
Munaf T. A. Rahimo;A. Kopta;U. Schlapbach;J. Vobecký;R. Schnell;S. Klaka
本文提出了一种先进的反向导通（RC）IGBT的概念。新技术被称为双模式绝缘栅晶体管（BIGT），这意味着该器件可以通过在两种操作模式下利用相同的可用硅体积，在晶体管（IGBT）模式和续流二极管模式下以相同的电流密度操作。BIGT的设计理念与标准RC-IGBT不同，其目标是用单芯片完全取代最先进的双芯片IGBT/二极管方法。BIGT还能够提高整体性能，特别是在硬开关条件下。
In this paper, an advanced Reverse Conducting (RC) IGBT concept is presented. The new technology is referred to as the Bi-mode Insulated Gate Transistor (BIGT) implying that the device can operate at the same current densities in transistor (IGBT) mode and freewheeling diode mode by utilizing the same available silicon volume in both operational modes. The BIGT design concept differs from that of the standard RC-IGBT while targeting to fully replace the state-of-the-art two-chip IGBT/Diode approach with a single chip. The BIGT is also capable of improving the over-all performance especially under hard switching conditions.