A silicon single-electron transistor memory operating at room temperature
A silicon single-electron transistor memory operating at room temperature
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DOI：
10.1126/science.275.5300.649
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发表时间：
1997-01-31
期刊：
影响因子：
56.9
通讯作者：
Chou, SY
中科院分区：
文献类型：
--
作者：
Guo, LJ;Leobandung, E;Chou, SY
一个单电子存储器，其中一位信息存储在一个电子，在室温下，该存储器是硅中的浮栅金属氧化物半导体晶体管，（类似于10纳米）小于德拜屏蔽长度的单个电子和纳米级多晶硅点（类似于7纳米× 7纳米）作为嵌入在沟道和控制栅极之间的浮置栅极，在浮置栅极上存储一个电子将整个沟道与控制栅极上的电势屏蔽，并导致（i）阈值电压的离散偏移，（ii）充电电压和偏移之间的阶梯关系，以及（iii）自限制充电过程。存储器的结构和制造应该与未来的超大规模集成电路兼容。
A single-electron memory, in which a bit of information is stored by one electron, is demonstrated at room temperature, The memory is a floating gate metal-oxide-semiconductor transistor in silicon with a channel width (similar to 10 nanometers) smaller than the Debye screening length of a single electron and a nanoscale polysilicon dot (similar to 7 nanometers by 7 nanometers) as the floating gate embedded between the channel and the control gate, Storing one electron on the floating gate screens the entire channel from the potential on the control gate and leads to (i) a discrete shift in the threshold voltage, (ii) a staircase relation between the charging voltage and the shift, and (iii) a self-limiting charging process. The structure and fabrication of the memory should be compatible with future ultralarge-scale integrated circuits.