Estimation of the Losses in Si and SiC Power Modules for Automotive Applications
Estimation of the Losses in Si and SiC Power Modules for Automotive Applications
复制标题
汽车应用中 Si 和 SiC 功率模块的损耗估算
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
M. Petit
中科院分区：
文献类型：
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作者：
Dounia Oustad;M. Ameziani;D. Lhotellier;S. Lefebvre;M. Petit
本文比较了 1200 V - 120 A 碳化硅 (SiC) MOSFET 模块与 1200 V - 100 A 硅 (Si) IGBT 模块在不同转换器拓扑（2 级和 3 级逆变器）中的性能，重点是预测和研究用于电动汽车应用的 Si IGBT 和 SiC MOSFET 功率模块的损耗模型（传导损耗和开关损耗）的准确性。它显示了一个基于双脉冲测试电路损耗实验估计的测试案例。用于估计各种工作条件下损耗的行为模型仅与从数据表中获得的 IGBT、MOSFET 和二极管特性知识相关。然后，将其与实验测量值进行比较。目前已经对 Si 和 SiC 功率模块的损耗估算进行了多项研究。本文重点研究直流母线电压对 Si 和 SiC 器件开关损耗以及所有其他开关条件的影响：温度、负载电流、栅极电阻以及功率环路电感。
This paper compares 1200 V - 120 A Silicon Carbide (SiC) MOSFET module with 1200 and 650 V - 100 A Silicon (Si) IGBT module performances in different converter topologies (2 and 3 level inverters) and it focuses on the prediction and the study of the veracity of a losses model (both conduction and switching losses) in Si IGBT and SiC MOSFET power modules used for electric vehicle applications. It shows a test case based on an experimental estimation of the losses with a double pulse test circuit. The behavioral model used to estimate losses in a wide range of operating conditions is only linked to the knowledge of the IGBT, MOSFET and diode characteristics obtained from datasheets. Then, it is compared with experimental measurements. Several studies have already been made on the estimation of the losses in Si and SiC power modules. This paper focuses on the study of the influence of the DC bus voltage on the switching losses for Si and SiC devices and all the other switching conditions: temperature, load current, gate resistance, but also the inductance of the power loop.