Measurement Methodology for Accurate Modeling of SiC MOSFET Switching Behavior Over Wide Voltage and Current Ranges
Measurement Methodology for Accurate Modeling of SiC MOSFET Switching Behavior Over Wide Voltage and Current Ranges
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DOI：
10.1109/tpel.2017.2764632
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发表时间：
2018-09
影响因子：
6.7
通讯作者：
H. Sakairi;Tatsuya Yanagi;H. Otake;N. Kuroda;Hiroaki Tanigawa
中科院分区：
文献类型：
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作者：
H. Sakairi;Tatsuya Yanagi;H. Otake;N. Kuroda;Hiroaki Tanigawa
本文提出了两种表征碳化硅MOSFET器件的新方法。所得到的数据被用来显著改进定制设备模型的提取，该定制设备模型现在可以准确地再现设备切换行为。首先，我们考虑了诸如碳化硅晶体管等功率器件的$I_{\Text{d}}-V_{\Text{ds}}$输出特性。这些参数通常使用传统的曲线示踪器进行测量，但由于器件功率合规性和自热，高压和大电流(HVHC)区域的表征非常具有挑战性。在本文中，我们介绍了一种克服自加热的测量技术，并根据开关波形得出了HVHC区域。器件的开关暂态特性被用来确定漏极电流$(I_{\TEXT{d}})$作为HVHC范围内漏源极电压$(V_{\TEXT{DS}})$的函数。其次，我们考虑了另一个具有挑战性的表征领域：器件开启时的非线性电容测量。通态器件的这些电容特性对于纠正关断开关暂态波形中的模拟和测量之间的不一致非常重要，并且不能使用传统的电容-电压计进行测量。我们将S参数测量作为获得关态器件和通态器件电容特性的一种有效方法。这些新的测量技术已被应用于碳化硅器件的建模。提取的器件模型是流行的Angelov−GaN高电子迁移率晶体管模型的修改版本，显示出在广泛的操作条件下器件开关波形的准确性有了显著提高。
This paper presents two novel measurement methods to characterize silicon carbide (SiC) MOSFET devices. The resulting data are utilized to significantly improve the extraction of a custom device model that can now accurately reproduce device switching behavior. First, we consider the $I_{\text{d}}- V_{\text{ds}}$ output characteristics of power devices such as SiC transistors. These are typically measured using traditional curve tracers, but the characterization of the high-voltage and high-current (HVHC) region is very challenging because of device power compliance and self-heating. In this paper, we introduce a measurement technique that overcomes self-heating and derives the HVHC region from switching waveforms. The switching transient characteristics of devices are used to determine drain current $(I_{\text{d}})$ as a function of drain–source voltage $(V_{\text{ds}})$ in the HVHC range. Second, we consider another challenging characterization area: measurement of nonlinear capacitances when device is turned on. These capacitance characteristics of on-state devices are important for correcting disagreements between simulations and measurements in turn-off switching transient waveforms and cannot be measured using a conventional capacitance-voltage meter. We introduce S-parameter measurements as an effective method to obtain the capacitance characteristics of both off-state devices and on-state devices. These novel measurement techniques have been applied to the modeling of a SiC device. The extracted device model, a modified version of the popular Angelov−GaN high-electron-mobility transistor model, shows significant improvement in terms of the accuracy of switching waveforms of devices over a wide range of operating conditions.