Optical and electrical characterization of α-InGaZnO thin film fabricated by pulsed laser deposition for thin film transistor applications
Optical and electrical characterization of α-InGaZnO thin film fabricated by pulsed laser deposition for thin film transistor applications
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DOI：
10.1088/0022-3727/42/21/215301
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发表时间：
2009-10
期刊：
影响因子：
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通讯作者：
Longyan Yuan;G. Fang;X. Zou;Huihui Huang;Haixiao Zou;Xiang-yun Han;Yihua Gao;Sheng Xu;
中科院分区：
文献类型：
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作者：
Longyan Yuan;G. Fang;X. Zou;Huihui Huang;Haixiao Zou;Xiang-yun Han;Yihua Gao;Sheng Xu;
采用脉冲激光沉积法在熔融石英衬底上制备了高透明、高迁移率的非晶InGaZnO薄膜。在700 °C下退火后，膜保持非晶，并且具有在3.50-3.62 eV范围内的带隙。在5 Pa和室温下沉积的薄膜表现出54 cm 2 V-1 s-1的霍尔迁移率。采用高k Ba0.6Sr0.4TiO3作为介质层，研制了一种工作在增强模式的α-InGaZnO薄膜晶体管，其饱和迁移率为5.8cm2V-1 s-1，开关比为2 × 105。
Highly transparent and amorphous InGaZnO thin films with high mobility were deposited on fused silica by pulsed laser deposition. The films remained amorphous after annealing at 700 °C and had bandgaps in the range 3.50–3.62 eV. The film deposited at 5 Pa and room temperature exhibits a Hall mobility of 54 cm2 V−1 s−1. An α-InGaZnO thin film transistor with high-k Ba0.6Sr0.4TiO3 as a dielectric layer and operating in enhanced mode with a saturation mobility of 5.8 cm2 V−1 s−1 and on/off ratio of 2 × 105 is demonstrated.