Controllable growth of 1–7 layers of graphene by chemical vapour deposition
Controllable growth of 1–7 layers of graphene by chemical vapour deposition
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DOI：
10.1016/j.carbon.2014.02.061
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发表时间：
2014-06
期刊：
影响因子：
10.9
通讯作者：
Zhiqiang Tu;Zhuchen Liu;Yongfeng Li;Fan Yang;Liqiang Zhang;Zhen Zhao;Chunming Xu;Shangfei Wu
中科院分区：
文献类型：
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作者：
Zhiqiang Tu;Zhuchen Liu;Yongfeng Li;Fan Yang;Liqiang Zhang;Zhen Zhao;Chunming Xu;Shangfei Wu
我们报道了通过化学气相沉积方法可以在多晶铜表面可控地合成厚度为1至7层的石墨烯薄膜。通过调节CH4和H2的流量比、反应压力、温度和反应时间来精确控制石墨烯的层数。通过扫描电子显微镜、透射电子显微镜、选区电子衍射、X射线衍射和拉曼光谱对合成的石墨烯薄膜进行了表征。此外，从铜转移到其他基材上的石墨烯薄膜具有良好的光学透过率，这使得它们适合用作透明导电材料。
We report that graphene films with thickness ranging from 1 to 7 layers can be controllably synthesized on the surface of polycrystalline copper by a chemical vapour deposition method. The number of layers of graphene is controlled precisely by regulating the flow ratio of CH4and H2, the reaction pressure, the temperature and the reaction time. The synthesized graphene films were characterized by scanning electron microscopy, transmission electron microscopy, selected area electron diffraction, X-ray diffraction and Raman spectroscopy. In addition, the graphene films transferred from copper to other substrates are found to have a good optical transmittance that makes them suitable for transparent conductive materials.