A simple large-scale synthesis of very long aligned silica nanowires
A simple large-scale synthesis of very long aligned silica nanowires
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DOI：
10.1016/s0009-2614(02)01697-4
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发表时间：
2003-01-06
影响因子：
2.8
通讯作者：
Lee, ST
中科院分区：
文献类型：
--
作者：
Hu, JQ;Jiang, Y;Lee, ST
已经发现了一种基于Si晶片的热氧化的简单方法，以提供非常长的、对准的二氧化硅纳米线的大规模合成。通过扫描电子显微镜、透射电子显微镜、能量色散X射线光谱和光致发光对生长产物进行了表征。所制备的SiO2纳米线无金属污染，超长长度为毫米级，直径大多数接近50 nm。SiO2纳米线在540 nm处有稳定的绿色光发射。研究了SiO2纳米线的成核和生长过程。(C)2002 Elsevier Science B.V.保留所有权利。
A simple method based on the thermal oxidation of Si wafers has been discovered to provide a large-scale synthesis of very long, aligned silica nanowires. The as-grown product was characterized by scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, and photoluminescence. The obtained SiO2 nanowires had no metal contaminations, ultralong lengths of millimeters, and most diameters of similar to50 nm. The PL spectra of the SiO2 nanowires showed a strong and stable green emission at 540 nm. The nucleation and growth of the SiO2 nanowires were investigated. (C) 2002 Elsevier Science B.V. All rights reserved.