Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode
Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode
复制标题
深层缺陷对Ni/4H-SiC肖特基二极管电性能的影响
DOI：
10.1088/1674-1056/28/2/027303
复制
发表时间：
2019
影响因子：
1.7
通讯作者：
X. Ji
中科院分区：
文献类型：
--
作者：
Jinlan Li;Yun Li;Ling Wang;Yue Xu;Feng Yan;P. Han;X. Ji
本文通过分析器件的I-V特性和深能级瞬态谱，研究了深能级缺陷对Ni/4 H-SiC肖特基二极管电学性能的影响。在室温以上，Ni/4 H-SiC肖特基二极管中发现了两种具有不同温度依赖性的肖特基势垒高度。DLTS测量进一步表明，在Ni/SiC界面附近存在两种缺陷Z1/2和Ti（c）a，能级分别为EC-0.6 7 eV和EC-0.16eV。后者作为离子化的钛受主驻留在立方Si晶格位置被认为是负责在二极管的局部区域中的低SBH，从而引起二极管的高反向漏电流。实验结果表明，Ti（c）a缺陷对4 H-SiC肖特基二极管的电学和热学性能有很大的影响。
In this paper, we investigate the influence of deep level defects on the electrical properties of Ni/4H–SiC Schottky diodes by analyzing device current–voltage (I–V) characteristics and deep-level transient spectra (DLTS). Two Schottky barrier heights (SBHs) with different temperature dependences are found in Ni/4H–SiC Schottky diode above room temperature. DLTS measurements further reveal that two kinds of defects Z 1/2 and Ti (c) a are located near the interface between Ni and SiC with the energy levels of E C–0.67 eV and E C–0.16 eV respectively. The latter one as the ionized titanium acceptor residing at cubic Si lattice site is thought to be responsible for the low SBH in the localized region of the diode, and therefore inducing the high reverse leakage current of the diode. The experimental results indicate that the Ti (c) a defect has a strong influence on the electrical and thermal properties of the 4H–SiC Schottky diode.