Electron field emission from GaN nanorod films grown on Si substrates with native silicon oxides
Electron field emission from GaN nanorod films grown on Si substrates with native silicon oxides
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DOI：
10.1063/1.1869549
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发表时间：
2005-02
影响因子：
4
通讯作者：
T. Yamashita;S. Hasegawa;S. Nishida;M. Ishimaru;Y. Hirotsu;H. Asahi
中科院分区：
文献类型：
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作者：
T. Yamashita;S. Hasegawa;S. Nishida;M. Ishimaru;Y. Hirotsu;H. Asahi
采用射频等离子体增强分子束外延技术在Si（001）衬底上生长了GaN纳米棒薄膜。GaN纳米棒薄膜由具有所谓的（0001）纤维状纹理的单晶纳米棒组成。每个纳米棒沿垂直于衬底表面的沿着c轴伸长，在薄膜平面内没有择优轴。所制备的GaN纳米棒薄膜具有良好的电子场发射特性，在0.1μA scincm ~ 2的电流密度下，场发射阈值低至1.25V scincm ~ 2，在2.5V scincm ~ 2的电场下，场发射电流密度高达2.5mA scincm ~ 2。这些优异的特性归因于纳米棒的几何构型及其良好的结晶质量以及GaN的低电子亲和势。
GaN nanorod films have been grown on Si(001) substrates with native silicon oxides by radio-frequency plasma-enhanced molecular beam epitaxy. GaN nanorod films are made up of single-crystalline nanorods with a so-called (0001) fiber-like texture. Each nanorod is elongated along c axis in perpendicular to the substrate surface and has no preferential axis in film plane. Excellent electron field emission characteristics were observed for the fabricated GaN nanorod films with a field emission threshold as low as 1.25V∕μm at a current density of 0.1μA∕cm2 and a field emission current density as high as 2.5mA∕cm2 at an applied field of 2.5V∕μm. These excellent characteristics are attributed to the geometrical configuration of nanorods and their good crystalline quality as well as the low electron affinity of GaN.