Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing
Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing
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DOI：
10.1063/1.4903533
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发表时间：
2014-12
影响因子：
3.2
通讯作者：
O. Bethge;C. Zimmermann;B. Lutzer;S. Simsek;J. Smoliner;M. Stöger-Pollach;C. Henkel;E. Bertagnolli
中科院分区：
文献类型：
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作者：
O. Bethge;C. Zimmermann;B. Lutzer;S. Simsek;J. Smoliner;M. Stöger-Pollach;C. Henkel;E. Bertagnolli
利用金属氧化物半导体电容器，以三(甲基环戊二烯)Y和H2O为前驱体，在n型(100)-Ge衬底上用原子层沉积的方法生长了氧化钇，研究了不同温度下氧气中热后沉积对Ge/Y2O3界面的影响。通过原位X射线光电子能谱分析，证实了在第一个晶界周期中生长了GeO，并通过高温(550°C-600°C)的氧退火获得了略低于1×1011 eV−1 cm−2的界面陷阱密度。良好的界面质量很可能是由界面GeO2的生长和热稳定的Ge_2O_3所驱动的。
The impact of thermal post deposition annealing in oxygen at different temperatures on the Ge/Y2O3 interface is investigated using metal oxide semiconductor capacitors, where the yttrium oxide was grown by atomic layer deposition from tris(methylcyclopentadienyl)yttrium and H2O precursors on n-type (100)-Ge substrates. By performing in-situ X-ray photoelectron spectroscopy, the growth of GeO during the first cycles of ALD was proven and interface trap densities just below 1 × 1011 eV−1 cm−2 were achieved by oxygen annealing at high temperatures (550 °C–600 °C). The good interface quality is most likely driven by the growth of interfacial GeO2 and thermally stabilizing yttrium germanate.