Spin lifetimes of electrons injected into GaAs and GaN
Spin lifetimes of electrons injected into GaAs and GaN
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DOI：
10.1063/1.1606873
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发表时间：
2003-09-01
影响因子：
4
通讯作者：
Newman, N
中科院分区：
文献类型：
--
作者：
Krishnamurthy, S;van Schilfgaarde, M;Newman, N
GaAs和GaN中电子的自旋弛豫时间由一个模型确定，该模型包括声子和电离杂质的动量散射，以及elliott - yafet， D'yakonov-Perel和birr - aronov - pikus机制的自旋散射。使用从经验伪势获得的远程紧密结合哈密顿量生成的精确带。推导出的自旋弛豫寿命的温度依赖性与砷化镓中的测量值吻合得很好。我们进一步表明，自旋寿命随着注入电子能量的增加而迅速降低，并在纵向光学声子能量处达到局部最大值。我们的计算预测，在所有温度下，纯GaN中的电子自旋寿命比GaAs中的电子自旋寿命长约三个数量级，这主要是由于较低的自旋轨道相互作用和较高的态导带密度。(C) 2003年美国物理研究所。
The spin relaxation times of electrons in GaAs and GaN are determined with a model that includes momentum scattering by phonons and ionized impurities, and spin scattering by the Elliot-Yafet, D'yakonov-Perel, and Bir-Aronov-Pikus mechanisms. Accurate bands generated using a long-range tight-binding Hamiltonian obtained from empirical pseudopotentials are used. The inferred temperature dependence of the spin relaxation lifetime agrees well with measured values in GaAs. We further show that the spin lifetimes decrease rapidly with injected electron energy and reach a local maximum at the longitudinal optical phonon energy. Our calculation predicts that electron spin lifetime in pure GaN is about three orders of magnitude longer than in GaAs at all temperatures, primarily as a result of the lower spin-orbit interaction and higher conduction band density of states. (C) 2003 American Institute of Physics.