Ion focusing in enhanced glow discharge plasma immersion ion implantation of hydrogen and nitrogen into silicon
Ion focusing in enhanced glow discharge plasma immersion ion implantation of hydrogen and nitrogen into silicon
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DOI：
10.1063/1.3467967
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发表时间：
2010-08
影响因子：
3.2
通讯作者：
Q. Lu;Zhuo Wang;Liuhe Li;R. Fu;P. Chu
中科院分区：
文献类型：
--
作者：
Q. Lu;Zhuo Wang;Liuhe Li;R. Fu;P. Chu
Ion focusing in enhanced glow discharge plasma immersion ion implantation (EGD-PIII) of hydrogen into silicon affects the lateral ion fluence uniformity. The phenomenon and its effects are investigated experimentally and theoretically under different conditions and compared to those in nitrogen EGD-PIII. Consistent results are obtained from experiments and numerical simulation disclosing that the lower the plasma density, the more severe is the ion focusing effect. The influence of the negative high voltage on the ion focusing effect is small compared to that of the plasma density.
