Structural and electric properties of BaSn0.15Ti0.85O3 films on ITO/glass substrate by RF sputtering from powder target
Structural and electric properties of BaSn0.15Ti0.85O3 films on ITO/glass substrate by RF sputtering from powder target
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DOI：
10.1016/j.matlet.2014.11.030
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发表时间：
2015-02
影响因子：
3
通讯作者：
G. Zhu;D. Yan;Hua-rui Xu;A. Yu
中科院分区：
文献类型：
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作者：
G. Zhu;D. Yan;Hua-rui Xu;A. Yu
采用粉末靶射频溅射法在掺锡氧化铟（ITO）/玻璃衬底上制备了BaSn0.15Ti0.85O3（BTS）铁电薄膜，研究了不同沉积速率下BTS薄膜的结构和电学性能。结果表明，BTS薄膜的漏电流与沉积速率密切相关，随沉积速率的增加而减小。当沉积速率为40 nm/min、厚度为500 nm时，所制备的薄膜的漏电流密度低于1.5×10 - 10 A/cm 2，而其介电可调谐性达到57.3%，并且在5 V的偏压下介电损耗仅为0.01。从所制备的BTS膜的西姆斯深度剖析，BTS膜在较快沉积速率下的较低漏电流密度可归因于较高沉积速率和较短沉积时间导致的具有低互扩散的较尖锐BTS/ITO界面。
BaSn0.15Ti0.85O3(BTS) ferroelectric thin films have been deposited on the tin-doped indium oxide (ITO)/glass substrate by RF sputtering from a powder target, and the structural and electrical properties of the BTS film are also investigated at various deposition rates. The results indicate that leakage current of the BTS film is strongly related to the deposition rate, which decreases with increasing deposition rates. The leakage current density of the as-prepared film for a deposition rate of 40 nm/min and thickness of 500 nm is lower than 1.5×10−10A/cm2, while its dielectric tunability reaches 57.3% and dielectric loss remains only 0.01 at a bias voltage of 5 V. From SIMS depth profiling of as-prepared BTS films, the lower leakage current density of the BTS film at a faster deposition rate may be attributed to the sharper BTS/ITO interface with a low inter-diffusion that results from the high deposition rate and shorter deposition time.