Crosslinkable high dielectric constant polymer dielectrics for low voltage organic field‐effect transistor memory devices
Crosslinkable high dielectric constant polymer dielectrics for low voltage organic field‐effect transistor memory devices
复制标题
DOI：
10.1002/pola.28209
复制
发表时间：
2016-10
期刊：
影响因子：
--
通讯作者：
Chih‐Chien Hung;Hung‐Chin Wu;Yu‐Cheng Chiu;S. Tung;Wen‐Chang Chen
中科院分区：
文献类型：
--
作者：
Chih‐Chien Hung;Hung‐Chin Wu;Yu‐Cheng Chiu;S. Tung;Wen‐Chang Chen
在本研究中，我们成功地合成了具有高介电常数的水/甲醇可溶性无规共聚物，聚（N-（羟甲基）丙烯酰胺-co-5-（9-（5-（二乙基氨基）戊基）-2-（4-乙烯基苯基）-9 H-芴（P（NMA-co-F6 NSt）），其包含化学交联链段（NMA）和空穴捕获结构单元（F6 NSt）。对于P1、P2、P3和P4的共聚物，两种单体（NMA：F6 NSt）的进料摩尔比分别设定为100：0、95：5、80：20和67：33。交联的P（NMA-co-F6 NSt）薄膜可以用作有机场效应晶体管（OFET）存储器件中的介电层和电荷储存层，并且表现出高k（即，4.91-6.47）特性，导致低电压操作和小功耗。基于P1-P4结构的器件在±5V的低工作电压下显示出优异的绝缘性能和良好的电荷存储性能，这是由于其紧密的网络结构和良好分散的捕获点。特别地，基于P3的存储器器件表现出4.13V的大存储器窗口，具有超过104 s的稳定的数据保持稳定性、104的大开/关比以及高达200次循环的良好耐久性特性。上述结果表明，使用新型可交联高k共聚物可以容易地实现高性能的OFET存储器件。© 2016 Wiley Periodicals，Inc. J. Polym.科学，部分A：聚合物。2016，54，3224-3236
In this study, we successfully synthesized water/methanol soluble random copolymers with a high dielectric constant, poly(n-(hydroxymethyl) acrylamide-co-5-(9-(5-(diethylamino)pentyl)−2-(4-vinylphenyl)−9H-fluorene(P(NMA-co-F6NSt)), which contained chemical crosslinkable segment (NMA) and hole trapping building block (F6NSt). The feeding molar ratios of two monomers (NMA:F6NSt) were set as 100:0, 95:5, 80:20, and 67:33 for the copolymers of P1, P2, P3, and P4, respectively. The crosslinked P(NMA-co-F6NSt) thin film could serve as both dielectric and charge storage layers in organic field-effect transistor (OFET) memory device and exhibited high k (i.e., 4.91–6.47) characteristics, leading to a low voltage operation and a small power consumption. Devices based on the P1-P4 dielectrics showed excellent insulating properties and good charge storage performance under a low operating voltage in a range of ±5V because of tightly network structures and well-dispersed trapping cites. In particular, P3-based memory device exhibited a large memory window of 4.13 V with stable data retention stability over 104 s, a large on/off ratio of 104, and good endurance characteristics as high as 200 cycles. The above results suggested that a high-performance OFET memory device could be facilely achieved using the novel crosslinkable high-k copolymers. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016, 54, 3224–3236