Complementary doping of van der Waals materials through controlled intercalation for monolithically integrated electronics
Complementary doping of van der Waals materials through controlled intercalation for monolithically integrated electronics
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DOI：
10.1007/s12274-020-2634-y
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发表时间：
2020-03
期刊：
影响因子：
9.9
通讯作者：
M. Ke;Huuduy Nguyen;H. Fan;Man Li;Huan Wu;Yongjie Hu
中科院分区：
文献类型：
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作者：
M. Ke;Huuduy Nguyen;H. Fan;Man Li;Huan Wu;Yongjie Hu
掺杂控制一直是货车德瓦尔斯材料电子应用的关键挑战。在这里，我们展示了互补掺杂的黑磷使用受控的离子插层，以实现单片建筑元素。我们表征的各向异性电输运作为离子浓度的函数，并报告了一个广泛可调的电阻率高达三个数量级的特征浓度依赖性对应于在嵌入过程中的相变。作为进一步的步骤，我们开发了p型和n型场效应晶体管以及具有高器件稳定性和性能的电子二极管。此外，还观察到了嵌入过程中电荷迁移率从380 cm 2/（V·s）提高到820 cm 2/（V·s）的现象，并解释为基于Orab初始计算的中性杂质散射被抑制。我们的研究提供了一种独特的方法来原子控制货车范德瓦尔斯材料的电性能，并可能开辟新的机会，在开发先进的电子和物理平台。
Doping control has been a key challenge for electronic applications of van der Waals materials. Here, we demonstrate complementary doping of black phosphorus using controlled ionic intercalation to achieve monolithic building elements. We characterize the anisotropic electrical transport as a function of ion concentrations and report a widely tunable resistivity up to three orders of magnitude with characteristic concentration dependence corresponding to phase transitions during intercalation. As a further step, we develop both p-type and n-type field effect transistors as well as electrical diodes with high device stability and performance. In addition, enhanced charge mobility from 380 to 820 cm2/(V·s) with the intercalation process is observed and explained as the suppressed neutral impurity scattering based on ourab initiocalculations. Our study provides a unique approach to atomically control the electrical properties of van der Waals materials, and may open up new opportunities in developing advanced electronics and physics platforms.