Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires
Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires
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DOI：
10.1021/acs.nanolett.5b02900
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发表时间：
2015-10-01
期刊：
影响因子：
10.8
通讯作者：
Tchernycheva, Maria
中科院分区：
文献类型：
--
作者：
Dai, Xing;Messanvi, Agnes;Tchernycheva, Maria
我们展示了基于MOCVD生长的核/壳InGaN/GaN纳米线的大面积全柔性蓝色发光二极管。其制备依赖于聚合物的封装、纳米线的剥离和使用银纳米线透明电极的接触。LED表现出整流行为，点亮电压在3V左右。器件在多次弯曲到3 mm曲率半径下没有电致发光退化，也没有在没有任何保护封装的情况下在环境条件下及时存储一个月以上。还制作了具有高透光率的全透明柔性LED。最后，结合两层不同In含量的InGaN/GaN纳米线，实现了绿色和蓝色两种光谱范围的双色柔性发光二极管。
We demonstrate large area fully flexible blue LEDs based on core/shell InGaN/GaN nano-wires grown by MOCVD. The fabrication relies on polymer encapsulation, nanowire lift-off and contacting using silver nanowire transparent electrodes. The LEDs exhibit rectifying behavior with a light-up voltage around 3 V. The devices show no electro-luminescence degradation neither under multiple bending down to 3 mm curvature radius nor in time for more than one month storage in ambient conditions without any protecting encapsulation. Fully transparent flexible LEDs with high optical transmittance are also fabricated. Finally, a two-color flexible LED emitting in the green and blue spectral ranges is demonstrated combining two layers of InGaN/GaN nanowires with different In contents.