Suppression of light degradation of carrier lifetimes in low-resistivity CZ–Si solar cells
Suppression of light degradation of carrier lifetimes in low-resistivity CZ–Si solar cells
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DOI：
10.1016/s0927-0248(00)00103-3
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发表时间：
2001
影响因子：
6.9
通讯作者：
T. Saitoh;X. Wang;H. Hashigami;T. Abe;T. Igarashi;S. Glunz;S. Rein;W. Wettling;I. Yamasaki;H. Sawai;H. Ohtuka;T. Warabisako
中科院分区：
文献类型：
--
作者：
T. Saitoh;X. Wang;H. Hashigami;T. Abe;T. Igarashi;S. Glunz;S. Rein;W. Wettling;I. Yamasaki;H. Sawai;H. Ohtuka;T. Warabisako
一项国际联合研究旨在研究低电阻率 Si CZ 晶片的光劣化，并提供抑制劣化的实用解决方案。在 AM1.5 辐照下评估了 10 种 CZ、MCZ 和 FZ 硅片，并使用低温和高温工艺加工制造太阳能电池。使用低氧含量的 MCZ Si 晶圆和高氧含量的 Ga 掺杂 CZ 晶圆可抑制寿命下降。此外，高温氧化也能有效显着减少光衰。通过使用B掺杂MCZ和Ga掺杂CZ晶片并结合高温处理，可以实现太阳能电池的无退化。
An international joint research has been conducted to investigate light degradation of low-resistivity Si CZ wafers and also to provide practical solutions to suppress the degradation. Ten kinds of CZ, MCZ and FZ Si wafers were evaluated under AM1.5 irradiation and processed to fabricate solar cells using low- and high-temperature processes. Lifetime degradation was suppressed using MCZ Si wafers with low oxygen content and Ga-doped CZ wafers with high oxygen content. In addition, high-temperature oxidation was also effective to reduce light degradation remarkably. No degradation of solar cells could be realized by using B-doped MCZ and Ga-doped CZ wafers combined with a high-temperature processing.