Effect of K-Dopant on the Electro-Magnetic Behaviors in Cu 1− x K x Ir 2 S 4
Effect of K-Dopant on the Electro-Magnetic Behaviors in Cu 1− x K x Ir 2 S 4
复制标题
K-掺杂剂对 Cu 1− x K x Ir 2 S 4 电磁行为的影响
DOI：
10.7566/jpsj.83.024602
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发表时间：
2014
影响因子：
1.7
通讯作者：
Yuheng Zhang
中科院分区：
文献类型：
--
作者：
Lei Zhang;L. Ling;Ranran Zhang;Guolin Feng;Changjin Zhang;L. Pi;Yuheng Zhang
研究了掺K的Cu1−xKxIr2S4的电磁行为。通过拉曼光谱分析发现，K的掺杂对晶格结构影响不大，但对化学键有明显的影响。此外，K的掺杂对材料的电子和磁性也有显著的影响。虽然K的掺杂对相变温度几乎没有影响，但轨道诱导Peierls相变的滞后变宽，这可能是由于掺杂剂引起的势垒造成的。此外，绝缘相中的ρ（T）关系具有金属行为的倾向，这表明K+的3p6电子与S2−离子的3p6电子之间的轨道杂化。
The electro-magnetic behaviors of K-doped Cu1−xKxIr2S4 are investigated. It is found that the doping of K has rare effect on the crystal lattice, however, apparent influence on the chemical bonds is observed from the Raman spectroscopy. In addition, the doping of K has prominent impact on the electronic and magnetic behaviors. Although the phase transition temperature is hardly affected by the doping of K, the hysteresis of orbitally induced Peierls phase transition is widened, which may be attributed to the potential barriers caused by the dopant. Moreover, the ρ(T) relation in the insulating phase has the tendency to metallic behavior, which indicates the orbital hybridization between 3p6 electrons of K+ with that of S2− ions.
光电发射光谱探测 CuIr_2S_4 中的带隙状态和光照射效应
DOI：
--
发表时间：
2008
期刊：
Physical Review B 78
影响因子：
--
作者：
K. Takubo;T. Mizokawa;N. Matsumoto;S. Nagata
通讯作者：
S. Nagata
影响因子：
8.6
作者：
Khomskii, DI;Mizokawa, T
通讯作者：
Mizokawa, T