Critical behavior of two-dimensional intrinsically ferromagnetic semiconductor CrI3
Critical behavior of two-dimensional intrinsically ferromagnetic semiconductor CrI3
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DOI：
10.1063/1.5019286
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发表时间：
2018-01
期刊：
影响因子：
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通讯作者：
G. Lin;G. Lin;Xuan Luo;Fangchu Chen;Fangchu Chen;Jian-Min Yan;Jian-Min Yan;Jian-Hua Gao;Jian-Hua Gao;Y. P. Sun;Y. P. Sun;Wei Tong;P. Tong;Wenjian Lu;Zhigao Sheng;Zhigao Sheng;Wenhai Song;Xiangde Zhu;Yuping Sun;Yuping Sun
中科院分区：
文献类型：
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作者：
G. Lin;G. Lin;Xuan Luo;Fangchu Chen;Fangchu Chen;Jian-Min Yan;Jian-Min Yan;Jian-Hua Gao;Jian-Hua Gao;Y. P. Sun;Y. P. Sun;Wei Tong;P. Tong;Wenjian Lu;Zhigao Sheng;Zhigao Sheng;Wenhai Song;Xiangde Zhu;Yuping Sun;Yuping Sun
CrI 3是一种罕见的二维铁磁半导体材料，在自旋电子器件中具有重要的应用价值。与CrCl 3的磁性呈现2D-Heisenberg行为不同，CrI 3表现出更大的货车范德华能隙，更小的解理能和更强的磁各向异性，这可能导致3D磁性特征。因此，我们研究了CrI 3在磁性转变附近的临界行为。我们使用修正的Arrott图和Kouvel-Fisher方法，并进行临界等温线分析，估计临界指数附近的铁磁相变。这表明CrI 3的磁性遵循具有平均场型相互作用的3D-Ising模型的交叉行为，其中临界指数B{eta}、{\gamma}和{\delta}在居里温度为64 K时分别为0.323、0.835和3.585。我们认为这种交叉现象是由强的单轴各向异性和不可避免的层间耦合引起的。我们的实验证明了交叉行为的适用性，一个二维铁磁半导体。
CrI3, which belongs to a rare category of two-dimensional (2D) ferromagnetic semiconductors, is of great interest for spintronic device applications. Unlike CrCl3 whose magnetism presents a 2D-Heisenberg behavior, CrI3 exhibits a larger van der Waals gap, smaller cleavage energy, and stronger magnetic anisotropy which could lead to a 3D magnetic characteristic. Hence, we investigate the critical behavior of CrI3 in the vicinity of magnetic transition. We use the modified Arrott plot and Kouvel-Fisher method, and conduct critical isotherm analysis to estimate the critical exponents near the ferromagnetic phase transition. This shows that the magnetism of CrI3 follows the crossover behavior of a 3D-Ising model with mean field type interactions where the critical exponents \b{eta}, {\gamma}, and {\delta} are 0.323, 0.835, and 3.585, respectively, at the Curie temperature of 64 K. We propose the crossover behavior can be attributed to the strong uniaxial anisotropy and inevitable interlayer coupling. Our experiment demonstrates the applicability of crossover behavior to a 2D ferromagnetic semiconductor.