High-temperature degradation of NiSi films: Agglomeration versus NiSi2 nucleation
High-temperature degradation of NiSi films: Agglomeration versus NiSi2 nucleation
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NiSi 薄膜的高温降解：团聚与 NiSi2 成核
DOI：
10.1063/1.2005380
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发表时间：
2005
影响因子：
3.2
通讯作者：
C. Lavoie
中科院分区：
文献类型：
--
作者：
D. Deduytsche;C. Detavernier;R. Meirhaeghe;C. Lavoie
研究了NiSi薄膜在绝缘体上硅（SOI）、多晶硅或预退火多晶硅衬底上形成的厚度从10到60nm的层的热力学和形态稳定性。利用原位x射线衍射、薄片电阻和激光散射测量来评估薄膜的稳定性。对于厚度小于20nm的NiSi薄膜，团聚是主要的降解机制。对于较厚的薄膜，NiSi的团聚和NiSi2的成核同时发生，两种降解机制相互影响。在不同基质上形成的NiSi的降解有显著差异。令人惊讶的是，在SOI衬底上的团聚比在多晶硅衬底上的团聚更糟糕，这表明NiSi薄膜的质地在团聚过程中起着重要作用。正如预期的那样，在金属沉积之前对多晶硅衬底进行预退火，结果表明：
The thermodynamical and morphological stability of NiSi thin films has been investigated for layers of thickness ranging from 10to60nm formed on either silicon-on-insulator (SOI), polycrystalline silicon, or preannealed polycrystalline silicon substrates. The stability of the films was evaluated using in situ x-ray-diffraction, sheet resistance, and laser light-scattering measurements. For NiSi films that are thinner than 20nm, agglomeration is the main degradation mechanism. For thicker films, the agglomeration of NiSi and nucleation of NiSi2 occur simultaneously, and both degradation mechanisms influence each other. Significant differences were observed in the degradation of the NiSi formed on different substrates. Surprisingly, agglomeration is worse on SOI substrates than on poly-Si substrates, suggesting that the texture of the NiSi film plays an important role in the agglomeration process. As expected, preannealing of the polycrystalline silicon substrate prior to metal deposition results in a signi...