Thermal management for flip-chip high power amplifiers utilizing carbon nanotube bumps
Thermal management for flip-chip high power amplifiers utilizing carbon nanotube bumps
复制标题
利用碳纳米管凸块的倒装芯片高功率放大器的热管理
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
K. Joshin
中科院分区：
文献类型：
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作者：
I. Soga;D. Kondo;Y. Yamaguchi;T. Iwai;T. Kikkawa;K. Joshin
碳纳米管（CNT）已成功地用作倒装芯片高功率放大器（HPA）的源极凸点。我们制作了具有金属涂层的细间距CNT凸点，其已连接到靠近AlGaN/GaN HEMT的有源区的电极。利用CNT凸块的栅极宽度为28.8 mm且工作电压为50 V的倒装芯片AlGaN/GaN HEMT HPA在2.4 GHz的频率下表现出49.3 dBm的输出功率。
Carbon nanotubes (CNTs) have been successfully used as source bumps for flip-chip high power amplifiers (HPAs). We have fabricated fine pitch CNT bumps with metal coating, which have been connected to electrodes close to the active areas of AlGaN/GaN HEMTs. A flip-chip AlGaN/GaN HEMT HPA with a gate width of 28.8 mm utilizing CNT bumps and an operating voltage of 50 V exhibits an output power of 49.3 dBm at a frequency of 2.4 GHz.