Advanced copper interconnections for silicon CMOS technologies
Advanced copper interconnections for silicon CMOS technologies
复制标题
用于硅 CMOS 技术的先进铜互连
DOI：
10.1016/0169-4332(95)00105-0
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发表时间：
1995
影响因子：
6.7
通讯作者：
J. Torres
中科院分区：
文献类型：
--
作者：
J. Torres
用于先进半导体器件的互连正面临越来越困难的挑战。目前正在研究几种材料替代品，以满足非常严格的要求。目前，铜是最广泛接受的先进金属化材料。这篇文章给出了一个全球范围的R&D正在进行的努力，以开发可制造的工艺和他们的集成在互连结构的每一个层次的一般概述。对于每一个基本步骤，最先进的，特别是在欧洲铜互连项目（COIN）内获得的结果的重点。
Interconnects for advanced semiconductor devices are facing increasingly difficult challenges. Several material alternatives are being investigated in order to meet very strict requirements. Currently, copper is the most widely accepted material for advanced metallization. This article gives a general overview of the world-wide R&D effort underway to develop both manufacturable processes and their integration at each level of the interconnect structure. For each basic step, the state of the art is presented, with particular focus on the results obtained within the European Copper Interconnection Project (COIN).