Structural and electrical characterization of CoTiN metal gates
Structural and electrical characterization of CoTiN metal gates
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DOI：
10.1063/1.4908547
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发表时间：
2015-02
影响因子：
3.2
通讯作者：
Ranida Wongpiya;J. Ouyang;Chia-Jung Chung;D. T. Duong;M. Deal;Y. Nishi;B. Clemens
中科院分区：
文献类型：
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作者：
Ranida Wongpiya;J. Ouyang;Chia-Jung Chung;D. T. Duong;M. Deal;Y. Nishi;B. Clemens
随着纳米晶体管中栅极尺寸的不断减小，具有非晶态或接近非晶态结构的金属栅极可能会潜在地减小由颗粒引起的功函数变化。此外，众所周知，非晶态材料具有优异的扩散阻挡性能，这有助于防止由于接触栅极的金属的扩散而导致功函数的变化。在这项工作中，我们发现，随着钴的加入，多晶锡薄膜变得更无定形，颗粒尺寸更小。X=60-80%的CoX(TiN)1-x薄膜似乎由嵌入在非晶基质中的纳米晶组成，并且在至少600°C的退火温度下是热稳定的，没有显著的晶化，将溅射沉积过程中的氮气流量比从9%降低到2.5%，进一步降低了薄膜的结晶度，这表现为纳米晶更稀疏甚至更小。除了部分无定形外，这些CoTiN薄膜还具有良好的热稳定性，L说。
As the gate size continues to decrease in nanoscale transistors, having metal gates with amorphous or near amorphous structures can potentially reduce grain-induced work function variation. Furthermore, amorphous materials are known to have superior diffusion barrier properties, which can help prevent work function change due to the diffusion of metals in contact with the gate. In this work we show that with the addition of cobalt, thin films of polycrystalline TiN become more amorphous with a smaller grain size. Cox(TiN)1-x films, where x = 60–80%, appear to consist of nanocrystals embedded in an amorphous matrix, and are thermally stable with no significant crystallization up to an annealing temperature of at least 600 °C. Reducing the nitrogen gas flow ratio during sputter deposition from 9% to 2.5% further decreases the films' crystallinity, which is apparent by more sparse and even smaller nanocrystals. In addition to being partially amorphous, these CoTiN films also exhibit good thermal stability, l...