Package Degradation’s Impact on SiC MOSFETs Loss: A Comparison of Kelvin and Non-Kelvin Designs
Package Degradation’s Impact on SiC MOSFETs Loss: A Comparison of Kelvin and Non-Kelvin Designs
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封装退化对 SiC MOSFET 损耗的影响：开尔文设计与非开尔文设计的比较
DOI：
10.1109/apec42165.2021.9487466
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Wang, Gangyao
中科院分区：
文献类型：
--
作者：
Yang, Fei;Pu, Shi;Akin, Bilal;Butler, Stephanie W.;Wang, Gangyao
SiC MOSFET中与老化相关的电参数变化会对功率转换器性能产生不利影响。在本文中，封装退化对器件的开关损耗的影响进行了全面的研究。TO封装的3引脚和4引脚器件进行了评估，并比较了封装退化前后器件的导通电阻和开关损耗。从实验结果中，可以观察到，引线键合退化可以显着影响3引脚器件的开关损耗：观察到超过23.8% / 27%的导通/关断损耗增加，并且在更高的电流和更快的开关条件下变得更加明显。增加的封装电阻和与栅极环路的电耦合导致损耗变化。相比之下，4引脚Kelvin连接SiC MOSFET的开关损耗不受封装退化的影响，因为Kelvin-源极连接有助于解耦封装退化对栅极驱动电路的影响。研究结果为基于SiC MOSFET的转换器设计提供了指导，以确保稳定运行并避免长期运行中潜在的热不稳定问题。
Aging-related electrical parameter shifts in SiC MOSFETs can adversely affect the power converter performance. In this paper, the package degradation’s effect on the device’s switching loss is comprehensively investigated. Both the TO-packaged 3-pin and 4-pin devices are evaluated, and the device’s on-resistances and switching losses are compared before and after the package degradation. From the experimental results, it is observed that the wire bond degradation can significantly affect the switching loss of the 3-pin devices: more than 23.8% / 27% turn-on/off loss increase is observed, and it becomes more noticeable at higher current and faster switching conditions. The increased package resistance and electrical coupling to the gate loop contribute to the loss variation. In contrast, the switching loss in the 4-pin Kelvin connected SiC MOSFET is not affected by package degradation as the Kelvin-source connection helps to decouple the package degradation’s impact on gate drive circuits. The findings serve as a guideline for SiC MOSFETs based converter designs to ensure robust operation and avoid potential thermal instability issues in the long-term operation.